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一种具有雪崩增益区的单行载流子光探测器的设计
首发时间：2025-03-13
摘要：本文提出了一种具有雪崩倍增层的雪崩单行载流子光探测器(avalanche uni-travelling carrier photodiode，autc-pd)，在其崖层与吸收层之间增加了本征的inp倍增层，利用光生电子在高场强下的碰撞电离效应实现光电流增益。通过优化崖层的掺杂浓度，使高电场区域集中于倍增层以增强雪崩效应，同时使收集层内电场分布趋于电子峰值漂移速度电场强度以优化其高速响应特性。并且该器件一定程度上克服了传统雪崩光电探测器存在的增益带宽积限制，缓解了增益与带宽相互制约的问题。优化后的器件3db响应带宽为60ghz，响应度为0.504a/w，gbp可达到300ghz，能够满足单波长100gbps光互连信道中的高速信号的响应需求。
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design of a uni-travelling carrier photodetector with avalanche gain region
abstract：this paper presents an avalanche uni-travelling carrier photodiode (autc-pd) featuring an avalanche multiplication layer inserting between the pd\'s cliff layer and its absorption layer. the device utilizes the impact ionization effect of photogenerated electrons under high electric field intensity to achieve photocurrent gain. by optimizing the doping concentration of the cliff layer, the high electric field region is concentrated in the avalanche multiplication layer to enhance the gain effect. at the same time, the electric field distribution in the pd\'s collection layer is adjusted to approach the intensity that the electron transit with its peak drift velocity for optimizing the pd\'s high-speed response characteristics. furthermore, to some extent, the proposed autc-pd overcomes the gain-bandwidth product (gbp) limitation inherent in traditional avalanche photodiodes (apds), and alleviates the trade-off between its gain and bandwidth. the optimized device exhibits a 3db bandwidth of 60ghz, a responsivity of 0.504a/w, and a gbp of up to 300ghz, meeting the requirements for high-speed signal response in single-wavelength 100gbps optical interconnect channels.
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一种具有雪崩增益区的单行载流子光探测器的设计
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