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resistance switching characteristic of ag/fe2o3/mos2/ag with very low switching voltage
首发时间：2023-12-04
abstract：in this paper,the resistive switching characteristics of ag/fe2o3/mos2/ag multilayer film deposited on ito by magnetron sputtering are investigated.the ag/fe2o3/mos2/ag device exhibits superior resistive switching behavior compared to the device without fe2o3 layer due to the positive effect of oxygen vacancies in fe2o3 on the formation of conducting filaments. the resistive switching ratio of the device is close to 7.0 × 105. the current value of the device drops sharply at 0.12 v when the voltage is swept forward, and the device switches from hrs back to lrs at -0.28 v when a voltage of opposite polarity is applied.the i-v curves of the device are fitted in double logarithmic coordinates, and it is found that the device is controlled by an ohmic conduction model in the low resistance state and two conduction models in the high resistance state: in the low bias region, which exhibits ohmic conduction, and at higher voltages, which is controlled by the sclc conduction model. such a resistive switching characteristic with very low switching voltage and high resistance ratio is of particular importance in the application of resistive stochastic storage.
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ag/fe2o3/mos2/ag中具有极低开关电压的电阻开关特性
摘要：近年来，以电阻开关现象为基础的阻变式随机储存器因为具有读写速度快、结构简单、能耗低等优点，而引起了人们广范的研究兴趣，最有期望成为下一代的新型存储器件。本文研究了通过磁控溅射在ito上沉积的ag/fe2o3/mos2/ag多层薄膜结构的电阻开关特性。ag/fe2o3/mos2/ag器件显示出强烈的双极电阻开关效应，电阻开关比接近106。而器件的正向开关电压低至0.12v，负向开关电压低至0.28v。与没有fe2o3层的器件相比，ag/fe2o3/mos2 ag/器件表现出更优异的电阻开关行为，这是因为fe2o3中氧空位对导电细丝的形成产生了积极的影响。用双对数坐标拟合了该器件的i-v曲线，发现器件在低阻态下由欧姆传导模型控制，在高阻态中有两种传导模型: 在低偏压区域，表现为欧姆传导，在较高的电压下由sclc 传导模型控制。这样一种具有极低开关电压和高电阻比的电阻开关特性在阻变式随机储存器的应用中具有特别重要的意义。
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